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Terahertz Emission from GaAs Films on Si(100) and Si(111) S..:
Yoshioka, Takashi
;
Takatori, Satoru
;
Minh, Pham Hong
...
Journal of Infrared, Millimeter, and Terahertz Waves. 32 (2011) 4 - p. 418-425 , 2011
Link:
https://doi.org/10.1007/s10762-011-9765-x
RT Journal T1 <Title>Terahertz Emission from GaAs Films on Si(100) and Si(111) Substrates Grown by Molecular Beam Epitaxy</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s10762-011-9765-x&Exemplar=1&LAN=DE A1 Yoshioka, Takashi A1 Takatori, Satoru A1 Minh, Pham Hong A1 Cadatal-Raduban, Marilou A1 Nakazato, Tomoharu A1 Shimizu, Toshihiko A1 Sarukura, Nobuhiko A1 Estacio, Elmer A1 Misa, John Vincent A1 Jaculbia, Rafael A1 Defensor, Michael A1 Somintac, Armando A1 Salvador, Arnel PB Springer Science and Business Media LLC YR 2011 SN 1866-6892 SN 1866-6906 JF Journal of Infrared, Millimeter, and Terahertz Waves VO 32 IS 4 SP 418 OP 425 LK http://dx.doi.org/https://doi.org/10.1007/s10762-011-9765-x DO https://doi.org/10.1007/s10762-011-9765-x SF ELIB - SuUB Bremen
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