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Numerical analysis of Double Gate and Gate All Around MOSFE..:
Abdi, M. A.
;
Djeffal, F.
;
Arar, D.
.
Journal of Materials Science: Materials in Electronics. 19 (2007) S1 - p. 248-253 , 2007
Link:
https://doi.org/10.1007/s10854-007-9531-y
RT Journal T1 <Title>Numerical analysis of Double Gate and Gate All Around MOSFETs with bulk trap states</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s10854-007-9531-y&Exemplar=1&LAN=DE A1 Abdi, M. A. A1 Djeffal, F. A1 Arar, D. A1 Hafiane, M. L. PB Springer Science and Business Media LLC YR 2007 SN 0957-4522 SN 1573-482X JF Journal of Materials Science: Materials in Electronics VO 19 IS S1 SP 248 OP 253 LK http://dx.doi.org/https://doi.org/10.1007/s10854-007-9531-y DO https://doi.org/10.1007/s10854-007-9531-y SF ELIB - SuUB Bremen
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