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Irradiation effects on AlGaN HFET devices and GaN layers:
Gnanapragasam, Sonia
;
Richter, Eberhard
;
Brunner, Frank
...
Journal of Materials Science: Materials in Electronics. 19 (2008) S1 - p. 64-67 , 2008
Link:
https://doi.org/10.1007/s10854-008-9589-1
RT Journal T1 <Title>Irradiation effects on AlGaN HFET devices and GaN layers</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s10854-008-9589-1&Exemplar=1&LAN=DE A1 Gnanapragasam, Sonia A1 Richter, Eberhard A1 Brunner, Frank A1 Denker, Andrea A1 Lossy, Richard A1 Mai, Michael A1 Lenk, Friedrich A1 Opitz-Coutureau, Jörg A1 Pensl, Gerhard A1 Schmidt, Jens A1 Zeimer, Ute A1 Wang, Liun A1 Krishnan, Baskar A1 Weyers, Markus A1 Würfl, Jaochim A1 Tränkle, Günther PB Springer Science and Business Media LLC YR 2008 SN 0957-4522 SN 1573-482X JF Journal of Materials Science: Materials in Electronics VO 19 IS S1 SP 64 OP 67 LK http://dx.doi.org/https://doi.org/10.1007/s10854-008-9589-1 DO https://doi.org/10.1007/s10854-008-9589-1 SF ELIB - SuUB Bremen
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