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Development of self-rectifying ZnO thin film resistive swit..:
Dongle, Vrushali S.
;
Dongare, Akshata A.
;
Mullani, Navaj B.
...
Journal of Materials Science: Materials in Electronics. 29 (2018) 21 - p. 18733-18741 , 2018
Link:
https://doi.org/10.1007/s10854-018-9997-9
RT Journal T1 <Title>Development of self-rectifying ZnO thin film resistive switching memory device using successive ionic layer adsorption and reaction method</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s10854-018-9997-9&Exemplar=1&LAN=DE A1 Dongle, Vrushali S. A1 Dongare, Akshata A. A1 Mullani, Navaj B. A1 Pawar, Pravin S. A1 Patil, Prashant B. A1 Heo, Jaeyeong A1 Park, Tae Joo A1 Dongale, Tukaram D. PB Springer Science and Business Media LLC YR 2018 SN 0957-4522 SN 1573-482X JF Journal of Materials Science: Materials in Electronics VO 29 IS 21 SP 18733 OP 18741 LK http://dx.doi.org/https://doi.org/10.1007/s10854-018-9997-9 DO https://doi.org/10.1007/s10854-018-9997-9 SF ELIB - SuUB Bremen
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