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Dangling bond defects in silicon-passivated strained-Si1−xG..:

Madia, O. ; Kepa, J. ; Afanas'ev, V. V....
Journal of Materials Science: Materials in Electronics.  31 (2019)  1 - p. 75-79 , 2019
Link: https://doi.org/10.1007/s10854-019-01098-2