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1 Ergebnisse
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A novel three-layer graded SiGe strain relaxed buffer for t..:
Zhao, Zhiqian
;
Li, Yongliang
;
Wang, Guilei
...
Journal of Materials Science: Materials in Electronics. 30 (2019) 15 - p. 14130-14135 , 2019
Link:
https://doi.org/10.1007/s10854-019-01779-y
RT Journal T1 <Title>A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s10854-019-01779-y&Exemplar=1&LAN=DE A1 Zhao, Zhiqian A1 Li, Yongliang A1 Wang, Guilei A1 Du, Anyan A1 Gu, Shihai A1 Li, Yan A1 Zhang, Qingzhu A1 Xu, Gaobo A1 Ma, Xueli A1 Wang, Xiaolei A1 Yang, Hong A1 Luo, Jun A1 Li, JunFeng A1 Yin, Huaxiang A1 Wang, Wenwu PB Springer Science and Business Media LLC YR 2019 SN 0957-4522 SN 1573-482X JF Journal of Materials Science: Materials in Electronics VO 30 IS 15 SP 14130 OP 14135 LK http://dx.doi.org/https://doi.org/10.1007/s10854-019-01779-y DO https://doi.org/10.1007/s10854-019-01779-y SF ELIB - SuUB Bremen
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