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Terahertz emission increase in GaAs films exhibiting struct..:
Gonzales, Karl Cedric
;
Prieto, Elizabeth Ann
;
Catindig, Gerald Angelo
...
Journal of Materials Science: Materials in Electronics. 32 (2021) 10 - p. 13825-13836 , 2021
Link:
https://doi.org/10.1007/s10854-021-05958-8
RT Journal T1 <Title>Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s10854-021-05958-8&Exemplar=1&LAN=DE A1 Gonzales, Karl Cedric A1 Prieto, Elizabeth Ann A1 Catindig, Gerald Angelo A1 De Los Reyes, Alexander A1 Faustino, Maria Angela A1 Tumanguil-Quitoras, Mae Agatha A1 Husay, Horace Andrew A1 Vasquez, John Daniel A1 Somintac, Armando A1 Estacio, Elmer A1 Salvador, Arnel PB Springer Science and Business Media LLC YR 2021 SN 0957-4522 SN 1573-482X JF Journal of Materials Science: Materials in Electronics VO 32 IS 10 SP 13825 OP 13836 LK http://dx.doi.org/https://doi.org/10.1007/s10854-021-05958-8 DO https://doi.org/10.1007/s10854-021-05958-8 SF ELIB - SuUB Bremen
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