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1 Ergebnisse
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(001) and (11n)n = 1,3 GaAs substrate orientations for grow..:
Laifi, J.
;
Bchetnia, A.
Journal of Materials Science: Materials in Electronics. 33 (2022) 10 - p. 7587-7597 , 2022
Link:
https://doi.org/10.1007/s10854-022-07905-7
RT Journal T1 <Title>(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thickness</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s10854-022-07905-7&Exemplar=1&LAN=DE A1 Laifi, J. A1 Bchetnia, A. PB Springer Science and Business Media LLC YR 2022 SN 0957-4522 SN 1573-482X JF Journal of Materials Science: Materials in Electronics VO 33 IS 10 SP 7587 OP 7597 LK http://dx.doi.org/https://doi.org/10.1007/s10854-022-07905-7 DO https://doi.org/10.1007/s10854-022-07905-7 SF ELIB - SuUB Bremen
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