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1 Ergebnisse
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Growth and transport properties of AgInS2 ternary semicondu..:
Mobarak, M.
;
Nassary, M. M.
;
Gami, Fatma
.
Journal of Materials Science: Materials in Electronics. 33 (2022) 13 - p. 10278-10286 , 2022
Link:
https://doi.org/10.1007/s10854-022-08016-z
RT Journal T1 <Title>Growth and transport properties of AgInS2 ternary semiconductor</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s10854-022-08016-z&Exemplar=1&LAN=DE A1 Mobarak, M. A1 Nassary, M. M. A1 Gami, Fatma A1 Mostafa, Massaud PB Springer Science and Business Media LLC YR 2022 SN 0957-4522 SN 1573-482X JF Journal of Materials Science: Materials in Electronics VO 33 IS 13 SP 10278 OP 10286 LK http://dx.doi.org/https://doi.org/10.1007/s10854-022-08016-z DO https://doi.org/10.1007/s10854-022-08016-z SF ELIB - SuUB Bremen
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