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Gate dielectric based steady state & transient analysis of ..:
Nirosha, R.
;
Agarwal, Rajesh
Journal of Materials Science: Materials in Electronics. 34 (2023) 31 - p. , 2023
Link:
https://doi.org/10.1007/s10854-023-11580-7
RT Journal T1 <Title>Gate dielectric based steady state & transient analysis of channel characteristics for organic thin-film transistors</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s10854-023-11580-7&Exemplar=1&LAN=DE A1 Nirosha, R. A1 Agarwal, Rajesh PB Springer Science and Business Media LLC YR 2023 SN 0957-4522 SN 1573-482X JF Journal of Materials Science: Materials in Electronics VO 34 IS 31 LK http://dx.doi.org/https://doi.org/10.1007/s10854-023-11580-7 DO https://doi.org/10.1007/s10854-023-11580-7 SF ELIB - SuUB Bremen
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