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Effect of diffusion doping-induced defects on shunt resista..:
Muduli, Sakti Prasanna
;
Kale, Paresh
Journal of Materials Science: Materials in Electronics. 35 (2024) 6 - p. , 2024
Link:
https://doi.org/10.1007/s10854-024-12190-7
RT Journal T1 <Title>Effect of diffusion doping-induced defects on shunt resistance affecting Si-nanowire solar cell performance</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s10854-024-12190-7&Exemplar=1&LAN=DE A1 Muduli, Sakti Prasanna A1 Kale, Paresh PB Springer Science and Business Media LLC YR 2024 SN 0957-4522 SN 1573-482X JF Journal of Materials Science: Materials in Electronics VO 35 IS 6 LK http://dx.doi.org/https://doi.org/10.1007/s10854-024-12190-7 DO https://doi.org/10.1007/s10854-024-12190-7 SF ELIB - SuUB Bremen
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