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Effects of post-deposition annealing on temperature-depende..:
Cho, Young-Hun
;
Chung, Seung-Hwan
;
Park, Se-Rim
...
Journal of Materials Science: Materials in Electronics. 35 (2024) 14 - p. , 2024
Link:
https://doi.org/10.1007/s10854-024-12551-2
RT Journal T1 <Title>Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s10854-024-12551-2&Exemplar=1&LAN=DE A1 Cho, Young-Hun A1 Chung, Seung-Hwan A1 Park, Se-Rim A1 Choi, Ji-Soo A1 Moon, Soo-Young A1 Lee, Hyung-Jin A1 Lee, Geon-Hee A1 Koo, Sang-Mo PB Springer Science and Business Media LLC YR 2024 SN 0957-4522 SN 1573-482X JF Journal of Materials Science: Materials in Electronics VO 35 IS 14 LK http://dx.doi.org/https://doi.org/10.1007/s10854-024-12551-2 DO https://doi.org/10.1007/s10854-024-12551-2 SF ELIB - SuUB Bremen
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