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Improvement of β-Ga2O3-based Schottky barrier UV photodetec..:
Cherroun, Rima
;
Meftah, Afak
;
Sengouga, Nouredine
...
Journal of Materials Science: Materials in Electronics. 35 (2024) 16 - p. , 2024
Link:
https://doi.org/10.1007/s10854-024-12786-z
RT Journal T1 <Title>Improvement of β-Ga2O3-based Schottky barrier UV photodetector by 4H-SiC substrate, intrinsic buffer layer, and graphene surface contact</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s10854-024-12786-z&Exemplar=1&LAN=DE A1 Cherroun, Rima A1 Meftah, Afak A1 Sengouga, Nouredine A1 Labed, Madani A1 Kim, Hojoong A1 Rim, You Seung A1 Djemaa, Attafi A1 Meftah, Amjad PB Springer Science and Business Media LLC YR 2024 SN 0957-4522 SN 1573-482X JF Journal of Materials Science: Materials in Electronics VO 35 IS 16 LK http://dx.doi.org/https://doi.org/10.1007/s10854-024-12786-z DO https://doi.org/10.1007/s10854-024-12786-z SF ELIB - SuUB Bremen
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