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Design of a high-performance 12T SRAM cell for single event..:
Qi, Chunhua
;
Zhang, Yanqing
;
Ma, Guoliang
...
Science China Information Sciences. 64 (2021) 11 - p. , 2021
Link:
https://doi.org/10.1007/s11432-020-3123-2
RT Journal T1
Design of a high-performance 12T SRAM cell for single event upset tolerance
UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s11432-020-3123-2&Exemplar=1&LAN=DE A1 Qi, Chunhua A1 Zhang, Yanqing A1 Ma, Guoliang A1 Liu, Chaoming A1 Wang, Tianqi A1 Xiao, Liyi A1 Huo, Mingxue A1 Zhai, Guofu PB Springer Science and Business Media LLC YR 2021 SN 1674-733X SN 1869-1919 JF Science China Information Sciences VO 64 IS 11 LK http://dx.doi.org/https://doi.org/10.1007/s11432-020-3123-2 DO https://doi.org/10.1007/s11432-020-3123-2 SF ELIB - SuUB Bremen
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