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1 Ergebnisse
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Characterization of V-shaped Defects in 4H-SiC Homoepitaxia..:
Wu, Fangzhen
;
Wang, Huanhuan
;
Raghothamachar, Balaji
...
Journal of Electronic Materials. 44 (2014) 5 - p. 1293-1299 , 2014
Link:
https://doi.org/10.1007/s11664-014-3536-0
RT Journal T1
Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers
UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s11664-014-3536-0&Exemplar=1&LAN=DE A1 Wu, Fangzhen A1 Wang, Huanhuan A1 Raghothamachar, Balaji A1 Dudley, Michael A1 Chung, Gil A1 Zhang, Jie A1 Thomas, Bernd A1 Sanchez, Edward K. A1 Mueller, Stephan G. A1 Hansen, Darren A1 Loboda, Mark J. A1 Zhang, Lihua A1 Su, Dong A1 Kisslinger, Kim A1 Stach, Eric PB Springer Science and Business Media LLC YR 2014 SN 0361-5235 SN 1543-186X JF Journal of Electronic Materials VO 44 IS 5 SP 1293 OP 1299 LK http://dx.doi.org/https://doi.org/10.1007/s11664-014-3536-0 DO https://doi.org/10.1007/s11664-014-3536-0 SF ELIB - SuUB Bremen
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