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MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alter..:
Lei, W.
;
Gu, R. J.
;
Antoszewski, J.
...
Journal of Electronic Materials. 44 (2015) 9 - p. 3180-3187 , 2015
Link:
https://doi.org/10.1007/s11664-015-3876-4
RT Journal T1 <Title>MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s11664-015-3876-4&Exemplar=1&LAN=DE A1 Lei, W. A1 Gu, R. J. A1 Antoszewski, J. A1 Dell, J. A1 Neusser, G. A1 Sieger, M. A1 Mizaikoff, B. A1 Faraone, L. PB Springer Science and Business Media LLC YR 2015 SN 0361-5235 SN 1543-186X JF Journal of Electronic Materials VO 44 IS 9 SP 3180 OP 3187 LK http://dx.doi.org/https://doi.org/10.1007/s11664-015-3876-4 DO https://doi.org/10.1007/s11664-015-3876-4 SF ELIB - SuUB Bremen
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