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1 Ergebnisse
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Design and Analysis of GaSb/Si Based Negative Capacitance T..:
Anas, Mohd
;
Amin, S. Intekhab
;
Beg, Mirza Tariq
...
Silicon. 14 (2022) 17 - p. 11951-11961 , 2022
Link:
https://doi.org/10.1007/s12633-022-01918-x
RT Journal T1
Design and Analysis of GaSb/Si Based Negative Capacitance TFET at the Device and Circuit Level
UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s12633-022-01918-x&Exemplar=1&LAN=DE A1 Anas, Mohd A1 Amin, S. Intekhab A1 Beg, Mirza Tariq A1 Anam, Aadil A1 Chunn, Ankush A1 Anand, Sunny PB Springer Science and Business Media LLC YR 2022 SN 1876-990X SN 1876-9918 JF Silicon VO 14 IS 17 SP 11951 OP 11961 LK http://dx.doi.org/https://doi.org/10.1007/s12633-022-01918-x DO https://doi.org/10.1007/s12633-022-01918-x SF ELIB - SuUB Bremen
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