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Electrothermal Modeling of the Insulated Gate Bipolar Trans..:
Hanini, Wasma
;
Ayadi, Moez
Journal of Control, Automation and Electrical Systems. 32 (2021) 2 - p. 507-521 , 2021
Link:
https://doi.org/10.1007/s40313-020-00672-y
RT Journal T1 <Title>Electrothermal Modeling of the Insulated Gate Bipolar Transistor (IGBT) Using PSpice: Application to DC–DC Converter</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s40313-020-00672-y&Exemplar=1&LAN=DE A1 Hanini, Wasma A1 Ayadi, Moez PB Springer Science and Business Media LLC YR 2021 SN 2195-3880 SN 2195-3899 JF Journal of Control, Automation and Electrical Systems VO 32 IS 2 SP 507 OP 521 LK http://dx.doi.org/https://doi.org/10.1007/s40313-020-00672-y DO https://doi.org/10.1007/s40313-020-00672-y SF ELIB - SuUB Bremen
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