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Drain Current Characteristics of 6 H-SiC MESFET with Un-Dop..:
Padmaja, Pydimarri
;
Erigela, Radhamma
;
Reddy, D. Venkatarami
...
Transactions on Electrical and Electronic Materials. 25 (2024) 2 - p. 210-217 , 2024
Link:
https://doi.org/10.1007/s42341-024-00511-w
RT Journal T1 <Title>Drain Current Characteristics of 6 H-SiC MESFET with Un-Doped and Recessed Area under the Gate: A Simulation Study</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s42341-024-00511-w&Exemplar=1&LAN=DE A1 Padmaja, Pydimarri A1 Erigela, Radhamma A1 Reddy, D. Venkatarami A1 Faruq, SK Umar A1 Krishnamurthy, A. A1 Balaji, B. A1 Kumar, M. Lakshmana A1 Cheerla, Sreevardhan A1 Agarwal, Vipul A1 Gowthami, Y. PB Springer Science and Business Media LLC YR 2024 SN 1229-7607 SN 2092-7592 JF Transactions on Electrical and Electronic Materials VO 25 IS 2 SP 210 OP 217 LK http://dx.doi.org/https://doi.org/10.1007/s42341-024-00511-w DO https://doi.org/10.1007/s42341-024-00511-w SF ELIB - SuUB Bremen
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