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1 Ergebnisse
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Effect of PECVD Gate SiO2 Thickness on the Poly-Si/SiO2 Int..:
Park, Jungmin
;
Choi, Pyungho
;
Kim, Soonkon
...
Journal of Electrical Engineering & Technology. 16 (2021) 2 - p. 1027-1033 , 2021
Link:
https://doi.org/10.1007/s42835-020-00648-7
RT Journal T1 <Title>Effect of PECVD Gate SiO2 Thickness on the Poly-Si/SiO2 Interface in Low-Temperature Polycrystalline Silicon TFTs</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s42835-020-00648-7&Exemplar=1&LAN=DE A1 Park, Jungmin A1 Choi, Pyungho A1 Kim, Soonkon A1 Jeon, Bohyeon A1 Lee, Jongyoon A1 Choi, Byoungdeog PB Springer Science and Business Media LLC YR 2021 SN 1975-0102 SN 2093-7423 JF Journal of Electrical Engineering & Technology VO 16 IS 2 SP 1027 OP 1033 LK http://dx.doi.org/https://doi.org/10.1007/s42835-020-00648-7 DO https://doi.org/10.1007/s42835-020-00648-7 SF ELIB - SuUB Bremen
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