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1 Ergebnisse
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Structure of GaAs heteroepitaxial layer grown on GaP(001) b..:
Takashi Nomura
;
Kenji Murakami
;
Kenji Ishikawa
...
Surface Science. 242 (1991) 1-3 - p. 166-170 , 1991
Link:
https://doi.org/10.1016/0039-6028(91)90261-p
RT Journal T1
Structure of GaAs heteroepitaxial layer grown on GaP(001) by molecular beam epitaxy
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_0039-6028(91)90261-p&Exemplar=1&LAN=DE A1 Takashi Nomura A1 Kenji Murakami A1 Kenji Ishikawa A1 Masahiro Miyao A1 Tsuyoshi Yamaguchi A1 Akira Sasaki A1 Minoru Hagino PB Elsevier BV YR 1991 SN 0039-6028 JF Surface Science VO 242 IS 1-3 SP 166 OP 170 LK http://dx.doi.org/https://doi.org/10.1016/0039-6028(91)90261-p DO https://doi.org/10.1016/0039-6028(91)90261-p SF ELIB - SuUB Bremen
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