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Improving the quality of microelectronic devices by straine..:
Beneking, Heinz
Materials Science and Engineering: B. 20 (1993) 1-2 - p. 41-47 , 1993
Link:
https://doi.org/10.1016/0921-5107(93)90393-2
RT Journal T1 <Title>Improving the quality of microelectronic devices by strained layer epitaxy</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_0921-5107(93)90393-2&Exemplar=1&LAN=DE A1 Beneking, Heinz PB Elsevier BV YR 1993 SN 0921-5107 JF Materials Science and Engineering: B VO 20 IS 1-2 SP 41 OP 47 LK http://dx.doi.org/https://doi.org/10.1016/0921-5107(93)90393-2 DO https://doi.org/10.1016/0921-5107(93)90393-2 SF ELIB - SuUB Bremen
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