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Impurities in InP grown by MOVPE using a new precursor Et2I..:
Favaro, M.L.
;
Rossetto, G.
;
Ajò, D.
...
Materials Science and Engineering: B. 28 (1994) 1-3 - p. 224-227 , 1994
Link:
https://doi.org/10.1016/0921-5107(94)90052-3
RT Journal T1 <Title>Impurities in InP grown by MOVPE using a new precursor Et2InNMe2: photoluminescence and Hall study</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_0921-5107(94)90052-3&Exemplar=1&LAN=DE A1 Favaro, M.L. A1 Rossetto, G. A1 Ajò, D. A1 Zanella, P. A1 Torzo, G. A1 Camporese, A. A1 De Zuane, F. PB Elsevier BV YR 1994 SN 0921-5107 JF Materials Science and Engineering: B VO 28 IS 1-3 SP 224 OP 227 LK http://dx.doi.org/https://doi.org/10.1016/0921-5107(94)90052-3 DO https://doi.org/10.1016/0921-5107(94)90052-3 SF ELIB - SuUB Bremen
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