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1 Ergebnisse
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DC and microwave characteristics of Lg 50 nm T-gate InAlN/A..:
Murugapandiyan, P.
;
Ravimaran, S.
;
William, J.
AEU - International Journal of Electronics and Communications. 77 (2017) - p. 163-168 , 2017
Link:
https://doi.org/10.1016/j.aeue.2017.05.004
RT Journal T1 <Title>DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.aeue.2017.05.004&Exemplar=1&LAN=DE A1 Murugapandiyan, P. A1 Ravimaran, S. A1 William, J. PB Elsevier BV YR 2017 SN 1434-8411 JF AEU - International Journal of Electronics and Communications VO 77 SP 163 OP 168 LK http://dx.doi.org/https://doi.org/10.1016/j.aeue.2017.05.004 DO https://doi.org/10.1016/j.aeue.2017.05.004 SF ELIB - SuUB Bremen
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