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Impact of leakage current in germanium channel based DMDG T..:
Gracia, D.
;
Nirmal, D.
;
Moni, D. Jackuline
AEU - International Journal of Electronics and Communications. 96 (2018) - p. 164-169 , 2018
Link:
https://doi.org/10.1016/j.aeue.2018.09.024
RT Journal T1 <Title>Impact of leakage current in germanium channel based DMDG TFET using drain-gate underlap technique</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.aeue.2018.09.024&Exemplar=1&LAN=DE A1 Gracia, D. A1 Nirmal, D. A1 Moni, D. Jackuline PB Elsevier BV YR 2018 SN 1434-8411 JF AEU - International Journal of Electronics and Communications VO 96 SP 164 OP 169 LK http://dx.doi.org/https://doi.org/10.1016/j.aeue.2018.09.024 DO https://doi.org/10.1016/j.aeue.2018.09.024 SF ELIB - SuUB Bremen
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