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A 2-D Modeling of Fe doped Dual Material Gate AlGaN/AlN/GaN..:

Sowmya, K. ; Balamurugan, N.B. ; Parvathy, V.
AEU - International Journal of Electronics and Communications.  103 (2019)  - p. 46-56 , 2019
Link: https://doi.org/10.1016/j.aeue.2019.02.016