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Die area recovery to record a resistive memory in a memrist..:
Ali, Hassan
;
Feng, Zhaoyang
;
Ni, Haibin
AEU - International Journal of Electronics and Communications. 144 (2022) - p. 154058 , 2022
Link:
https://doi.org/10.1016/j.aeue.2021.154058
RT Journal T1 <Title>Die area recovery to record a resistive memory in a memristive crossbar array</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.aeue.2021.154058&Exemplar=1&LAN=DE A1 Ali, Hassan A1 Feng, Zhaoyang A1 Ni, Haibin PB Elsevier BV YR 2022 SN 1434-8411 JF AEU - International Journal of Electronics and Communications VO 144 SP 154058 LK http://dx.doi.org/https://doi.org/10.1016/j.aeue.2021.154058 DO https://doi.org/10.1016/j.aeue.2021.154058 SF ELIB - SuUB Bremen
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