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Design of soft-error resilient SRAM cell with high read and..:
Kumar, Sandeep
;
Mukherjee, Atin
AEU - International Journal of Electronics and Communications. 168 (2023) - p. 154719 , 2023
Link:
https://doi.org/10.1016/j.aeue.2023.154719
RT Journal T1 <Title>Design of soft-error resilient SRAM cell with high read and write stability for robust operations</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.aeue.2023.154719&Exemplar=1&LAN=DE A1 Kumar, Sandeep A1 Mukherjee, Atin PB Elsevier BV YR 2023 SN 1434-8411 JF AEU - International Journal of Electronics and Communications VO 168 SP 154719 LK http://dx.doi.org/https://doi.org/10.1016/j.aeue.2023.154719 DO https://doi.org/10.1016/j.aeue.2023.154719 SF ELIB - SuUB Bremen
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