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Corrigendum to 'Enhanced electrical properties of oxide sem..:
Thi Nguyen, Cam Phu
;
Raja, Jayapal
;
Kim, Sunbo
...
Applied Surface Science. 469 (2019) - p. 1016 , 2019
Link:
https://doi.org/10.1016/j.apsusc.2018.06.191
RT Journal T1
Corrigendum to 'Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region' [Applied Surface Science 396 (2017) 1472–1477]
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.apsusc.2018.06.191&Exemplar=1&LAN=DE A1 Thi Nguyen, Cam Phu A1 Raja, Jayapal A1 Kim, Sunbo A1 Jang, Kyungsoo A1 Tuan Le, Anh Huy A1 Lee, Youn-Jung A1 Yi, Junsin PB Elsevier BV YR 2019 SN 0169-4332 JF Applied Surface Science VO 469 SP 1016 LK http://dx.doi.org/https://doi.org/10.1016/j.apsusc.2018.06.191 DO https://doi.org/10.1016/j.apsusc.2018.06.191 SF ELIB - SuUB Bremen
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