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First demonstration of hetero-epitaxial ε-Ga2O3 MOSFETs by ..:
Chen, Weiqu
;
Luo, Haoxun
;
Chen, Zimin
...
Applied Surface Science. 603 (2022) - p. 154440 , 2022
Link:
https://doi.org/10.1016/j.apsusc.2022.154440
RT Journal T1
First demonstration of hetero-epitaxial ε-Ga2O3 MOSFETs by MOCVD and a F-plasma surface doping
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.apsusc.2022.154440&Exemplar=1&LAN=DE A1 Chen, Weiqu A1 Luo, Haoxun A1 Chen, Zimin A1 Pei, Yanli A1 Wang, Gang A1 Lu, Xing PB Elsevier BV YR 2022 SN 0169-4332 JF Applied Surface Science VO 603 SP 154440 LK http://dx.doi.org/https://doi.org/10.1016/j.apsusc.2022.154440 DO https://doi.org/10.1016/j.apsusc.2022.154440 SF ELIB - SuUB Bremen
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