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1 Ergebnisse
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Ion energy dependence of dry etch damage depth in Ga2O3 Sch..:
Chiang, Chao-Ching
;
Xia, Xinyi
;
Li, Jian-Sian
..
Applied Surface Science. 631 (2023) - p. 157489 , 2023
Link:
https://doi.org/10.1016/j.apsusc.2023.157489
RT Journal T1
Ion energy dependence of dry etch damage depth in Ga2O3 Schottky rectifiers
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.apsusc.2023.157489&Exemplar=1&LAN=DE A1 Chiang, Chao-Ching A1 Xia, Xinyi A1 Li, Jian-Sian A1 Ren, Fan A1 Pearton, S.J. PB Elsevier BV YR 2023 SN 0169-4332 JF Applied Surface Science VO 631 SP 157489 LK http://dx.doi.org/https://doi.org/10.1016/j.apsusc.2023.157489 DO https://doi.org/10.1016/j.apsusc.2023.157489 SF ELIB - SuUB Bremen
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