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A strategy to grow three dimensional InGaN/GaN heterostruct..:
Kulkarni, Mandar A.
;
Ryu, Hyesu
;
Choi, Hak-Jong
...
Applied Surface Science. 654 (2024) - p. 159529 , 2024
Link:
https://doi.org/10.1016/j.apsusc.2024.159529
RT Journal T1
A strategy to grow three dimensional InGaN/GaN heterostructure exclusively on non-polar m-plane of two-step etched GaN nanorods
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.apsusc.2024.159529&Exemplar=1&LAN=DE A1 Kulkarni, Mandar A. A1 Ryu, Hyesu A1 Choi, Hak-Jong A1 Abdullah, Ameer A1 Thaalbi, Hamza A1 Tariq, Fawad A1 Hyun Lee, Sang A1 Lim, Hyungjun A1 Ryu, Sang-Wan PB Elsevier BV YR 2024 SN 0169-4332 JF Applied Surface Science VO 654 SP 159529 LK http://dx.doi.org/https://doi.org/10.1016/j.apsusc.2024.159529 DO https://doi.org/10.1016/j.apsusc.2024.159529 SF ELIB - SuUB Bremen
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