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Depth profiling of the Si ion implantation induced disorder..:
Gupta, Gaurav
;
Jozwik, Przemyslaw
;
Ojha, Sunil
...
Applied Surface Science. 665 (2024) - p. 160296 , 2024
Link:
https://doi.org/10.1016/j.apsusc.2024.160296
RT Journal T1
Depth profiling of the Si ion implantation induced disorder and strain in 4H-SiC and the thermal annealing recovery
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.apsusc.2024.160296&Exemplar=1&LAN=DE A1 Gupta, Gaurav A1 Jozwik, Przemyslaw A1 Ojha, Sunil A1 Umapathy, G.R. A1 Pandey, Akhilesh A1 Rath, Shyama PB Elsevier BV YR 2024 SN 0169-4332 JF Applied Surface Science VO 665 SP 160296 LK http://dx.doi.org/https://doi.org/10.1016/j.apsusc.2024.160296 DO https://doi.org/10.1016/j.apsusc.2024.160296 SF ELIB - SuUB Bremen
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