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1 Ergebnisse
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Vacancy-driven resistive switching behavior based on wafer-..:
Zhong, Jixiang
;
Lin, Xin
;
Sun, Han
...
Applied Surface Science. 678 (2024) - p. 161050 , 2024
Link:
https://doi.org/10.1016/j.apsusc.2024.161050
RT Journal T1 <Title>Vacancy-driven resistive switching behavior based on wafer-scale MoSe2 artificial synapses</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.apsusc.2024.161050&Exemplar=1&LAN=DE A1 Zhong, Jixiang A1 Lin, Xin A1 Sun, Han A1 Wang, Fang A1 Liu, Kai A1 Wei, Junqing A1 Li, Zewen A1 Ji, Yujing A1 Liu, Peng A1 Liu, Weili A1 Zhang, Kailiang PB Elsevier BV YR 2024 SN 0169-4332 JF Applied Surface Science VO 678 SP 161050 LK http://dx.doi.org/https://doi.org/10.1016/j.apsusc.2024.161050 DO https://doi.org/10.1016/j.apsusc.2024.161050 SF ELIB - SuUB Bremen
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