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1 Ergebnisse
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The effect of Ge addition on the RESET operation of a phase..:
Park, Young-wook
;
Lee, Hyun Seok
;
Ahn, Hyung Woo
...
Current Applied Physics. 10 (2010) 1 - p. e79-e82 , 2010
Link:
https://doi.org/10.1016/j.cap.2009.12.019
RT Journal T1
The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTe
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.cap.2009.12.019&Exemplar=1&LAN=DE A1 Park, Young-wook A1 Lee, Hyun Seok A1 Ahn, Hyung Woo A1 Wu, Zhe A1 Lee, Suyoun A1 Jeong, Jeung-hyun A1 Jeong, Doo Seok A1 Yi, Kyung-woo A1 Cheong, Byung-ki PB Elsevier BV YR 2010 SN 1567-1739 JF Current Applied Physics VO 10 IS 1 SP e79 OP e82 LK http://dx.doi.org/https://doi.org/10.1016/j.cap.2009.12.019 DO https://doi.org/10.1016/j.cap.2009.12.019 SF ELIB - SuUB Bremen
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