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Gate stack technology for advanced high-mobility Ge-channel..:
Watanabe, Heiji
;
Kutsuki, Katsuhiro
;
Kasuya, Atsushi
...
Current Applied Physics. 12 (2012) - p. S10-S19 , 2012
Link:
https://doi.org/10.1016/j.cap.2012.04.025
RT Journal T1
Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.cap.2012.04.025&Exemplar=1&LAN=DE A1 Watanabe, Heiji A1 Kutsuki, Katsuhiro A1 Kasuya, Atsushi A1 Hideshima, Iori A1 Okamoto, Gaku A1 Saito, Shoichiro A1 Ono, Tomoya A1 Hosoi, Takuji A1 Shimura, Takayoshi PB Elsevier BV YR 2012 SN 1567-1739 JF Current Applied Physics VO 12 SP S10 OP S19 LK http://dx.doi.org/https://doi.org/10.1016/j.cap.2012.04.025 DO https://doi.org/10.1016/j.cap.2012.04.025 SF ELIB - SuUB Bremen
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