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Modeling the simultaneous effects of thermal and polarizati..:
Belmabrouk, Hafedh
;
Chouchen, Bilel
;
Feddi, El Mustapha
...
Optik. 207 (2020) - p. 163883 , 2020
Link:
https://doi.org/10.1016/j.ijleo.2019.163883
RT Journal T1
Modeling the simultaneous effects of thermal and polarization in InGaN/GaN based high electron mobility transistors
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.ijleo.2019.163883&Exemplar=1&LAN=DE A1 Belmabrouk, Hafedh A1 Chouchen, Bilel A1 Feddi, El Mustapha A1 Dujardin, Francis A1 Tlili, Iskander A1 Ben Ayed, Mossaad A1 Gazzah, Mohamed Hichem PB Elsevier BV YR 2020 SN 0030-4026 JF Optik VO 207 SP 163883 LK http://dx.doi.org/https://doi.org/10.1016/j.ijleo.2019.163883 DO https://doi.org/10.1016/j.ijleo.2019.163883 SF ELIB - SuUB Bremen
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