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1 Ergebnisse
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Varying nitrogen background pressure; an efficient approach..:
Biswas, Mahitosh
;
Shinde, Nilesh
;
Makkar, Roshan Lal
..
Journal of Alloys and Compounds. 695 (2017) - p. 3163-3169 , 2017
Link:
https://doi.org/10.1016/j.jallcom.2016.11.328
RT Journal T1
Varying nitrogen background pressure; an efficient approach to improve electrical properties of MBE-grown GaAs1−xNx thin films with less atomic disorder
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.jallcom.2016.11.328&Exemplar=1&LAN=DE A1 Biswas, Mahitosh A1 Shinde, Nilesh A1 Makkar, Roshan Lal A1 Bhatnagar, Anuj A1 Chakrabarti, Subhananda PB Elsevier BV YR 2017 SN 0925-8388 JF Journal of Alloys and Compounds VO 695 SP 3163 OP 3169 LK http://dx.doi.org/https://doi.org/10.1016/j.jallcom.2016.11.328 DO https://doi.org/10.1016/j.jallcom.2016.11.328 SF ELIB - SuUB Bremen
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