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1 Ergebnisse
1
Ag filament induced nonvolatile resistive switching memory ..:
Han, Pengde
;
Sun, Bai
;
Li, Jia
...
Journal of Colloid and Interface Science. 505 (2017) - p. 148-153 , 2017
Link:
https://doi.org/10.1016/j.jcis.2017.05.082
RT Journal T1 <Title>Ag filament induced nonvolatile resistive switching memory behaviour in hexagonal MoSe2 nanosheets</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.jcis.2017.05.082&Exemplar=1&LAN=DE A1 Han, Pengde A1 Sun, Bai A1 Li, Jia A1 Li, Tianjing A1 Shi, Qingle A1 Jiao, Baoxiang A1 Wu, Qisheng A1 Zhang, Xuejiao PB Elsevier BV YR 2017 SN 0021-9797 JF Journal of Colloid and Interface Science VO 505 SP 148 OP 153 LK http://dx.doi.org/https://doi.org/10.1016/j.jcis.2017.05.082 DO https://doi.org/10.1016/j.jcis.2017.05.082 SF ELIB - SuUB Bremen
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