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Investigation of void formation beneath thin AlN layers by ..:
Kumagai, Yoshinao
;
Enatsu, Yuuki
;
Ishizuki, Masanari
...
Journal of Crystal Growth. 312 (2010) 18 - p. 2530-2536 , 2010
Link:
https://doi.org/10.1016/j.jcrysgro.2010.04.008
RT Journal T1
Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.jcrysgro.2010.04.008&Exemplar=1&LAN=DE A1 Kumagai, Yoshinao A1 Enatsu, Yuuki A1 Ishizuki, Masanari A1 Kubota, Yuki A1 Tajima, Jumpei A1 Nagashima, Toru A1 Murakami, Hisashi A1 Takada, Kazuya A1 Koukitu, Akinori PB Elsevier BV YR 2010 SN 0022-0248 JF Journal of Crystal Growth VO 312 IS 18 SP 2530 OP 2536 LK http://dx.doi.org/https://doi.org/10.1016/j.jcrysgro.2010.04.008 DO https://doi.org/10.1016/j.jcrysgro.2010.04.008 SF ELIB - SuUB Bremen
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