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Distribution model of arsenic antisite defects in LTG:GaAs:
Chen, Nien-Po
;
Janes, D.B.
Journal of Physics and Chemistry of Solids. 69 (2008) 2-3 - p. 325-329 , 2008
Link:
https://doi.org/10.1016/j.jpcs.2007.07.026
RT Journal T1 <Title>Distribution model of arsenic antisite defects in LTG:GaAs</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.jpcs.2007.07.026&Exemplar=1&LAN=DE A1 Chen, Nien-Po A1 Janes, D.B. PB Elsevier BV YR 2008 SN 0022-3697 JF Journal of Physics and Chemistry of Solids VO 69 IS 2-3 SP 325 OP 329 LK http://dx.doi.org/https://doi.org/10.1016/j.jpcs.2007.07.026 DO https://doi.org/10.1016/j.jpcs.2007.07.026 SF ELIB - SuUB Bremen
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