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Improvement of single event transients effect for a novel A..:
Sun, Shuxiang
;
Xie, Xintong
;
Zhang, Pengfei
...
Journal of Science: Advanced Materials and Devices. 9 (2024) 2 - p. 100692 , 2024
Link:
https://doi.org/10.1016/j.jsamd.2024.100692
RT Journal T1 <Title>Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.jsamd.2024.100692&Exemplar=1&LAN=DE A1 Sun, Shuxiang A1 Xie, Xintong A1 Zhang, Pengfei A1 Zhao, Zhijia A1 Wei, Jie A1 Luo, Xiaorong PB Elsevier BV YR 2024 SN 2468-2179 JF Journal of Science: Advanced Materials and Devices VO 9 IS 2 SP 100692 LK http://dx.doi.org/https://doi.org/10.1016/j.jsamd.2024.100692 DO https://doi.org/10.1016/j.jsamd.2024.100692 SF ELIB - SuUB Bremen
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