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1 Ergebnisse
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Physical analysis of breakdown in high-κ/metal gate stacks ..:
Pey, Kin Leong
;
Raghavan, Nagarajan
;
Wu, Xing
...
Microelectronic Engineering. 88 (2011) 7 - p. 1365-1372 , 2011
Link:
https://doi.org/10.1016/j.mee.2011.03.012
RT Journal T1
Physical analysis of breakdown in high-κ/metal gate stacks using TEM/EELS and STM for reliability enhancement (invited)
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mee.2011.03.012&Exemplar=1&LAN=DE A1 Pey, Kin Leong A1 Raghavan, Nagarajan A1 Wu, Xing A1 Liu, Wenhu A1 Li, Xiang A1 Bosman, Michel A1 Shubhakar, Kalya A1 Lwin, Zin Zar A1 Chen, Yining A1 Qin, Hailang A1 Kauerauf, Thomas PB Elsevier BV YR 2011 SN 0167-9317 JF Microelectronic Engineering VO 88 IS 7 SP 1365 OP 1372 LK http://dx.doi.org/https://doi.org/10.1016/j.mee.2011.03.012 DO https://doi.org/10.1016/j.mee.2011.03.012 SF ELIB - SuUB Bremen
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