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1 Ergebnisse
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1/f noise characteristics of AlGaN/GaN HEMTs with periodica..:
Im, Ki-Sik
;
Choi, Jinseok
;
Hwang, Youngmin
...
Microelectronic Engineering. 215 (2019) - p. 110985 , 2019
Link:
https://doi.org/10.1016/j.mee.2019.110985
RT Journal T1
1/f noise characteristics of AlGaN/GaN HEMTs with periodically carbon-doped GaN buffer layer
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mee.2019.110985&Exemplar=1&LAN=DE A1 Im, Ki-Sik A1 Choi, Jinseok A1 Hwang, Youngmin A1 An, Sung Jin A1 Roh, Jea-Seung A1 Kang, Seung-Hyeon A1 Lee, Jun-Hyeok A1 Lee, Jung-Hee PB Elsevier BV YR 2019 SN 0167-9317 JF Microelectronic Engineering VO 215 SP 110985 LK http://dx.doi.org/https://doi.org/10.1016/j.mee.2019.110985 DO https://doi.org/10.1016/j.mee.2019.110985 SF ELIB - SuUB Bremen
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