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1 Ergebnisse
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Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300..:
Onaya, Takashi
;
Nabatame, Toshihide
;
Sawamoto, Naomi
...
Microelectronic Engineering. 215 (2019) - p. 111013 , 2019
Link:
https://doi.org/10.1016/j.mee.2019.111013
RT Journal T1
Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mee.2019.111013&Exemplar=1&LAN=DE A1 Onaya, Takashi A1 Nabatame, Toshihide A1 Sawamoto, Naomi A1 Ohi, Akihiko A1 Ikeda, Naoki A1 Nagata, Takahiro A1 Ogura, Atsushi PB Elsevier BV YR 2019 SN 0167-9317 JF Microelectronic Engineering VO 215 SP 111013 LK http://dx.doi.org/https://doi.org/10.1016/j.mee.2019.111013 DO https://doi.org/10.1016/j.mee.2019.111013 SF ELIB - SuUB Bremen
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