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1 Ergebnisse
1
Effects of BOX thickness, silicon thickness, and backgate b..:
Su, Elizabeth Mei-hua
;
Hong, David Chuyang
;
Cristoloveanu, Sorin
.
Microelectronic Engineering. 238 (2021) - p. 111506 , 2021
Link:
https://doi.org/10.1016/j.mee.2021.111506
RT Journal T1
Effects of BOX thickness, silicon thickness, and backgate bias on SCE of ET-SOI MOSFETs
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mee.2021.111506&Exemplar=1&LAN=DE A1 Su, Elizabeth Mei-hua A1 Hong, David Chuyang A1 Cristoloveanu, Sorin A1 Taur, Yuan PB Elsevier BV YR 2021 SN 0167-9317 JF Microelectronic Engineering VO 238 SP 111506 LK http://dx.doi.org/https://doi.org/10.1016/j.mee.2021.111506 DO https://doi.org/10.1016/j.mee.2021.111506 SF ELIB - SuUB Bremen
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