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Physics-based simulation of stress-induced and electromigra..:
Kteyan, Armen
;
Sukharev, Valeriy
Microelectronic Engineering. 247 (2021) - p. 111585 , 2021
Link:
https://doi.org/10.1016/j.mee.2021.111585
RT Journal T1
Physics-based simulation of stress-induced and electromigration-induced voiding and their interactions in on-chip interconnects
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mee.2021.111585&Exemplar=1&LAN=DE A1 Kteyan, Armen A1 Sukharev, Valeriy PB Elsevier BV YR 2021 SN 0167-9317 JF Microelectronic Engineering VO 247 SP 111585 LK http://dx.doi.org/https://doi.org/10.1016/j.mee.2021.111585 DO https://doi.org/10.1016/j.mee.2021.111585 SF ELIB - SuUB Bremen
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