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Metamorphic InAs/InAlAs/InGaAs quantum dots: Establishing t..:
Datsenko, Oleksandr I.
;
Golovynskyi, Sergii
;
Suárez, Isaac
...
Microelectronic Engineering. 263 (2022) - p. 111840 , 2022
Link:
https://doi.org/10.1016/j.mee.2022.111840
RT Journal T1
Metamorphic InAs/InAlAs/InGaAs quantum dots: Establishing the limit for indium composition in InGaAs buffers
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mee.2022.111840&Exemplar=1&LAN=DE A1 Datsenko, Oleksandr I. A1 Golovynskyi, Sergii A1 Suárez, Isaac A1 Muñoz-Matutano, Guillermo A1 Trevisi, Giovanna A1 Frigeri, Paola A1 Seravalli, Luca PB Elsevier BV YR 2022 SN 0167-9317 JF Microelectronic Engineering VO 263 SP 111840 LK http://dx.doi.org/https://doi.org/10.1016/j.mee.2022.111840 DO https://doi.org/10.1016/j.mee.2022.111840 SF ELIB - SuUB Bremen
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