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Using water structuring by ions to address pattern loading ..:
Vereecke, Guy
;
De Coster, Hanne
;
Dochain, Denis
...
Microelectronic Engineering. 279 (2023) - p. 112058 , 2023
Link:
https://doi.org/10.1016/j.mee.2023.112058
RT Journal T1
Using water structuring by ions to address pattern loading in wet HF-based oxide recess etch
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mee.2023.112058&Exemplar=1&LAN=DE A1 Vereecke, Guy A1 De Coster, Hanne A1 Dochain, Denis A1 Nurekeyeva, Kunsulu A1 Conlan, Shona A1 Nsimba, Anthony A1 Wostyn, Kurt A1 Sanchez, Efrain Altamirano PB Elsevier BV YR 2023 SN 0167-9317 JF Microelectronic Engineering VO 279 SP 112058 LK http://dx.doi.org/https://doi.org/10.1016/j.mee.2023.112058 DO https://doi.org/10.1016/j.mee.2023.112058 SF ELIB - SuUB Bremen
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