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Design of novel 3T ternary DRAM with single word-line using..:
Sandhie, Zarin Tasnim
;
Ahmed, Farid Uddin
;
Chowdhury, Masud H.
Microelectronics Journal. 126 (2022) - p. 105498 , 2022
Link:
https://doi.org/10.1016/j.mejo.2022.105498
RT Journal T1
Design of novel 3T ternary DRAM with single word-line using CNTFET
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.mejo.2022.105498&Exemplar=1&LAN=DE A1 Sandhie, Zarin Tasnim A1 Ahmed, Farid Uddin A1 Chowdhury, Masud H. PB Elsevier BV YR 2022 SN 0026-2692 JF Microelectronics Journal VO 126 SP 105498 LK http://dx.doi.org/https://doi.org/10.1016/j.mejo.2022.105498 DO https://doi.org/10.1016/j.mejo.2022.105498 SF ELIB - SuUB Bremen
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